? semiconductor components industries, llc, 2014 june, 2014 ? rev. 0 1 publication order number: NTMFS5C646NL/d NTMFS5C646NL power mosfet 60 v, 4.7 m , 89 a, single n?channel features ? small footprint (5x6 mm) for compact design ? low r ds(on) to minimize conduction losses ? low q g and capacitance to minimize driver losses ? these devices are pb?free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss 60 v gate?to?source v oltage v gs 20 v continuous drain current r jc (notes 1, 3) steady state t c = 25 c i d 89 a t c = 100 c 56 power dissipation r jc (note 1) t c = 25 c p d 66 w t c = 100 c 26 continuous drain current r ja (notes 1, 2, 3) steady state t a = 25 c i d 19 a t a = 100 c 12 power dissipation r ja (notes 1 & 2) t a = 25 c p d 3.1 w t a = 100 c 1.2 pulsed drain current t a = 25 c, t p = 10 s i dm 720 a operating junction and storage temperature t j , t stg ?55 to +150 c source current (body diode) i s 97 a single pulse drain?to?source avalanche energy (i l(pk) = 5 a) e as 185 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance maximum ratings parameter symbol value unit junction?to?case ? steady state r jc 1.9 c/w junction?to?ambient ? steady state (note 2) r ja 41 1. the entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. surface?mounted on fr4 board using a 650 mm 2 , 2 oz. cu pad. 3. maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. marking diagram http://onsemi.com 5c646l = specific device code a = assembly location y = year w = work week zz = lot traceability 5c646l aywzz v (br)dss r ds(on) max i d max 60 v 4.7 m @ 10 v 89 a 6.3 m @ 4.5 v g (4) s (1,2,3) n?channel mosfet d (5) s s s g d d d d dfn5 (so?8fl) case 488aa style 1 1 see detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. ordering information
NTMFS5C646NL http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain?to?source breakdown voltage temperature coefficient v (br)dss / t j 15.5 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 40 v t j = 25 c 1.0 a t j = 125 c 250 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 4) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.2 2.0 v threshold temperature coefficient v gs(th) /t j ?4.9 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v i d = 50 a 3.8 4.7 m v gs = 4.5 v i d = 50 a 5.0 6.3 forward transconductance g fs v ds = 15 v, i d = 50 a 105 s charges, capacitances & gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 25 v 2164 pf output capacitance c oss 900 reverse transfer capacitance c rss 17 total gate charge q g(tot) v gs = 4.5 v, v ds = 30 v; i d = 25 a 15.7 nc total gate charge q g(tot) v gs = 10 v, v ds = 30 v; i d = 25 a 33.7 threshold gate charge q g(th) v gs = 4.5 v, v ds = 30 v; i d = 25 a 1.5 gate?to?source charge q gs 5.6 gate?to?drain charge q gd 5.1 plateau voltage v gp 2.8 v switching characteristics (note 5) turn?on delay time t d(on) v gs = 4.5 v, v ds = 30 v, i d = 25 a, r g = 2.5 10.4 ns rise time t r 14.9 turn?off delay time t d(off) 23.6 fall time t f 5.1 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 50 a t j = 25 c 0.88 1.2 v t j = 125 c 0.78 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 50 a 40.9 ns charge time t a 20.8 discharge time t b 20.1 reverse recovery charge q rr 32 nc 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperatures. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NTMFS5C646NL http://onsemi.com 3 typical characteristics figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 4.0 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 figure 3. on?resistance vs. gate?to?source voltage figure 4. on?resistance vs. drain current and gate voltage v gs , gate voltage (v) i d , drain current (a) 10 9 8 7 6 5 4 3 0.003 0.004 0.005 0.006 0.007 0.008 130 110 150 90 70 50 30 10 0.003 0.004 0.005 0.006 0.007 figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current vs. voltage t j , junction temperature ( c) v ds , drain?to?source voltage (v) 150 125 100 75 25 0 ?25 ?50 0.7 0.9 1.1 1.3 1.5 1.7 1.9 55 45 35 25 15 5 10 100 1000 10,000 100,000 i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) r ds(on) , normalized drain?to? source resistance ( ) i dss , leakage (na) 2.8 v 3.0 v 3.2 v 3.4 v 3.6 v 10 v to 4.5 v 3.8 v 3.5 t j = 125 c t j = 25 c t j = ?55 c t j = 25 c i d = 50 a t j = 25 c v gs = 4.5 v v gs = 10 v v gs = 10 v i d = 40 a 50 t j = 125 c t j = 85 c
NTMFS5C646NL http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge v ds , drain?to?source voltage (v) q g , total gate charge (nc) 60 50 40 30 20 10 0 0 400 800 1200 1600 2000 2400 28 24 20 16 12 8 4 0 0 2 4 6 8 10 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source?to?drain voltage (v) 100 10 1 1 10 100 1000 0.9 0.8 1.0 0.7 0.6 0.5 0.4 0.3 0 5 15 20 25 35 40 figure 11. safe operating area figure 12. i peak vs. time in avalanche v ds (v) time in avalanche (s) 100 10 1 0.1 1 10 100 1000 0.1 1 100 c, capacitance (pf) v gs , gate?t o?source voltage (v) t, time (ns) i s , source current (a) i ds (a) i peak (a) v gs = 0 v t j = 25 c f = 1 mhz c iss c oss c rss 32 v ds , drain?to?source voltage (v) 0 10 15 20 25 30 5 v ds = 30 v t j = 25 c i d = 25 a q t q gs q gd v gs = 4.5 v v dd = 30 v i d = 25 a t d(off) t d(on) t f t r t j = 125 c t j = 25 c t j = ?55 c 10 30 45 1e?04 1e?02 r ds(on) limit thermal limit package limit dc 0.01 ms 0.1 ms 1 ms 10 ms t c = 25 c v gs 10 v t j(initial) = 100 c t j(initial) = 25 c 1e?03 10
NTMFS5C646NL http://onsemi.com 5 figure 13. thermal characteristics pulse time (sec) 0.01 0.001 1 0.0001 0.1 0.00001 10 0.000001 0.01 0.1 1 10 100 r ja (t) ( c/w) 100 1000 single pulse 50% duty cycle 20% 10% 5% 2% 1% NTMFS5C646NL 650 mm 2 , 2 oz., cu single layer pad device ordering information device marking package shipping ? NTMFS5C646NLt1g 5c646l dfn5 (pb?free) 1500 / tape & reel NTMFS5C646NLt3g 5c646l dfn5 (pb?free) 5000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTMFS5C646NL http://onsemi.com 6 package dimensions dfn5 5x6, 1.27p (so?8fl) case 488aa issue h style 1: pin 1. source 2. source 3. source 4. gate 5. drain *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 0.475 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 3x 4x 4x m 3.00 3.40 0 ??? 3.80 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 bsc d1 4.70 4.90 d2 3.80 4.00 e 6.15 bsc e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.61 k 1.20 1.35 l 0.51 0.61 l1 0.05 0.17 a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 3 x c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 0.20 m pin 5 (exposed pad) on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NTMFS5C646NL/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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